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STD/SDT165
Thyristor-Diode Modules, Diode-Thyristor Modules
Type VRSM VDSM V STD/SDT165GK08 900 STD/SDT165GK12 1300 STD/SDT165GK14 1500 STD/SDT165GK16 1700 STD/SDT165GK18 1900 STD/SDT165GK20 2100 STD/SDT165GK22 2300 VRRM VDRM V 800 1200 1400 1600 1800 2000 2200 Dimensions in mm (1mm=0.0394")
Symbol ITRMS, IFRMS TVJ=TVJM ITAVM, IFAVM TC=85oC; 180o sine TVJ=45oC VR=0 ITSM, IFSM TVJ=TVJM VR=0
2
Test Conditions
Maximum Ratings 300 165
Unit A
t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine repetitive, IT=500A
6000 6400 5250 5600 180000 170000 137000 128000 150
A
i dt
TVJ=45oC VR=0 TVJ=TVJM VR=0
A2s
TVJ=TVJM f=50Hz, tp=200us (di/dt)cr VD=2/3VDRM IG=0.5A diG/dt=0.5A/us (dv/dt)cr PGM PGAV VRGM TVJ TVJM Tstg VISOL Md Weight 50/60Hz, RMS _ IISOL<1mA
A/us non repetitive, IT=ITAVM 500 1000 120 60 8 10 -40...+125 125 -40...+125 t=1min t=1s 3000 3600 2.25-2.75/20-25 4.5-5.5/40-48 125 V/us W W V
o
TVJ=TVJM; VDR=2/3VDRM RGK= ; method 1 (linear voltage rise) TVJ=TVJM IT=ITAVM tp=30us tp=500us
C
V~ Nm/lb.in. g
Mounting torque (M6) Terminal connection torque (M6) Typical including screws
STD/SDT165
Thyristor-Diode Modules, Diode-Thyristor Modules
Symbol Test Conditions Characteristic Values 40 1.36 0.8 1.6 VD=6V; VD=6V; TVJ=TVJM; TVJ=TVJM;
o
Unit mA V V m V mA V mA mA mA us us uC A K/W K/W mm mm m/s2
IRRM, IDRM TVJ=TVJM; VR=VRRM; VD=VDRM VT, VF VTO rT VGT IGT VGD IGD IL IH tgd tq QS IRM RthJC RthJK dS dA a per thyristor/diode; DC current per module per thyristor/diode; DC current per module Creeping distance on surface Creepage distance in air Maximum allowable acceleration TVJ=25 C TVJ=-40oC TVJ=25oC TVJ=-40oC VD=2/3VDRM VD=2/3VDRM
o
IT, IF=300A; TVJ=25 C For power-loss calculations only (TVJ=TVJM)
o
2 2.6 150 200 0.25 10 200 150 2 typ. 150 550 235 0.155 0.0775 0.225 0.1125 12.7 9.6 50
TVJ=25 C; tp=30us; VD=6V IG=0.45A; diG/dt=0.45A/us TVJ=25oC; VD=6V; RGK= TVJ=25 C; VD=1/2VDRM IG=0.5A; diG/dt=0.5A/us TVJ=TVJM; IT=160A; tp=200us; -di/dt=10A/us VR=100V; dv/dt=20V/us; VD=2/3VDRM TVJ=TVJM; IT, IF=300A; -di/dt=50A/us
o
FEATURES
* International standard package * Copper base plate * Planar passivated chips * Isolation voltage 3600 V~
APPLICATIONS
* Motor control * Power converter * Heat and temperature control for industrial furnaces and chemical processes * Lighting control * Contactless switches
ADVANTAGES
* Space and weight savings * Simple mounting * Improved temperature and power cycling * Reduced protection circuits
STD/SDT165
Thyristor-Diode Modules, Diode-Thyristor Modules
Fig. 1 Surge overload current ITSM, IFSM: Crest value, t: duration
Fig. 2 i2t versus time (1-10 ms)
Fig. 2a Maximum forward current at case temperature
Fig. 3 Power dissipation versus on-state current and ambient temperature (per thyristor or diode)
Fig. 4 Gate trigger characteristics
3 x STD/SDT165
Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature
Fig. 6 Gate trigger delay time
STD/SDT165
Thyristor-Diode Modules, Diode-Thyristor Modules
Fig. 7 Three phase AC-controller: Power dissipation versus RMS output current and ambient temperature
3 x STD/SDT165
Fig. 8 Transient thermal impedance junction to case (per thyristor or diode) RthJC for various conduction angles d: d DC 180oC 120oC 60oC 30oC RthJC (K/W) 0.155 0.167 0.175 0.197 0.226
Constants for ZthJC calculation: i 1 2 3 Rthi (K/W) 0.0072 0.0188 0.129 ti (s) 0.001 0.08 0.2
Fig. 9 Transient thermal impedance junction to heatsink (per thyristor or diode) RthJK for various conduction angles d: d DC 180oC 120oC 60oC 30oC RthJK (K/W) 0.225 0.237 0.245 0.262 0.296
Constants for ZthJK calculation: i 1 2 3 4 Rthi (K/W) 0.0072 0.0188 0.129 0.07 ti (s) 0.001 0.08 0.2 1.0

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